| ?产品类别:4A双向可控硅--TRIACs |
| ?工业型号:BT136-600E |
| ?封装外形:TO-252 (管脚排列:T1-T2-G) |
| ?储存温度/Tstg: -40～+150℃ |
| ?结温/Tj: -40～+125℃ |
| ?峰值门极功耗/PGM: 1.5W |
| ?重复峰值断态电压/VDRM: ≥600V |
| ?通态电流/IT(RMS): ≤4.0A (Ta=109℃) |
| ?峰值门极电压/VGM: ≥7.0V |
| ?峰值门极电流/IGM: ≤1.0A |
| ?浪涌通态电流/ITSM: ≤30/33A (一周,50/60HZ.峰值，不重复） |
| ?重复峰值断态电流/IDRM: ≤1.0 mA (VD=VDRM,单相,半波,T=125℃) |
| ?峰值通态电压/VTM: ≤1.6V(IT=6A,快速测量) |
| ?门极触发电流/I+GT1: ≤5.0mA(VD=6V, RL=10 Ω) |
| ?门极触发电流(I-GT1: ≤5.0mA(VD=6V, RL= 10Ω) |
| ?门极触发电流/I-GT3: ≤5.0mA(VD=6V, RL=10 Ω) |
| ?门极触发电流(I+GT3: 8~12mA(VD=6V, RL=10 Ω) |
| ?门极触发电压/V+GT1: ≤1.4V(VD=6V, RL=10 Ω) |
| ?门极触发电压/V-GT1: ≤1.4V(VD=6V, RL=10 Ω) |
| ?门极触发电压/V-GT3: ≤1.4V(VD=6V, RL= 10Ω) |
| ?门极触发电压/V+GT3:1.6~2.0V(VD=6V, RL= 10Ω) |
| ?无触发门极电压/VGD: ≥0.2V(TJ=125℃,VD=1/2VDRM) |
| ?断态电压临界上升率/(dv/dt)c: ≥5.0V/μS{TJ=125℃,VD=2/3VDRM,(di/dt)c=-2A/ms} |
| ?维持电流/IH: 10mA |
| ?热阻/Rth(j-c): ≤2.6℃/W(结到外壳) |
